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The HY-ST3005 handles 4–12 inch hard brittle semiconductor substrates for high-precision back thinning. Iteratively upgraded for superior accuracy and long-term stability, it features premium core assemblies (hydrostatic air-bearing grinding spindle, high-precision wafer spindle, high-rigidity large-diameter rotary table) and high automation for mass production of silicon and compound semiconductor wafers.
Brand :
HYRNUSItem No. :
HY-WT3005Order(MOQ) :
1 SetWarranty :
One-Year Warranty and Lifetime MaintenancePayment :
T/TLead Time :
7-35 DaysProduct Origin :
ChinaFully Automatic Ultra-Precision Wafer Thinning Machine for IC Production Line
Product Introduction
The HY-ST3005 fully automatic ultra-precision wafer back grinding machine processes 4–12 inch hard brittle semiconductor substrates for high-precision back thinning. It adopts In-Feed axial grinding for Φ200–300 mm wafers with customizable 12/15-inch diamond wheels. The core structure consists of dual hydrostatic air-bearing grinding spindles, three high-precision wafer carrier spindles and a high-rigidity large-diameter rotary table, supporting fully auto loading/unloading and 80μm ultra-thin wafer processing. Standard configuration includes in-line thickness measurement (optional non-contact NCG unit), up to 5 grinding recipes, overload waiting and full data recording. Three touch LCD monitors on front, left and right sides enable convenient and secure operation with real-time machining & equipment status display.
Product Advantages
1. Grinding Wheel: Adopt 12/15-inch standard diamond grinding wheels; grit size can be customized according to customer process requirements.
2. Grinding Mechanism: The thinning unit applies the axial In-Feed grinding principle, compatible with Φ200–300 mm wafer grinding and thinning.
3. Thickness Inspection: Fitted with a precision in-line measuring unit for real-time wafer thickness monitoring and accurate thinning control; non-contact NCG measuring unit is optional.
4. Process Functions: Supports up to 5 sets of grinding recipes, overload standby and complete data logging to meet diverse process demands.
5. Core Mechanical Structure: The machine core consists of 2 hydrostatic air-bearing grinding spindles, 3 high-precision chuck spindles and 1 high-rigidity large-diameter rotary table.
6. Automatic Handling & Ultra-Thin Machining: Full-automatic wafer loading and unloading; capable of processing ultra-thin wafers down to 80 μm.
7. Multi-Area Touch HMI: Three touch LCD monitors are installed on front, left and right sides for flexible operation at different stations. Only one monitor can be activated simultaneously to prevent misoperation and ensure safety. The interface displays real-time machining and equipment status for intuitive touch control.
Application Fields
It performs precision thinning for various hard brittle semiconductor substrates, covering silicon, germanium, sapphire, indium phosphide, silicon carbide, gallium nitride, gallium arsenide, silicon nitride and ceramic materials.
Equipment Workflow
The full workflow of the Fully Automatic Ultra-Precision Wafer Thinning Machine is divided into five main phases: Preparation Phase, Initialization Phase, Warm-up Phase, Processing Phase, and Completion Phase.The main tasks of each phase are as follows:
1. Preparation PhaseMainly preparatory work before processing: turning on the water supply, compressed air, power supply, and starting the equipment.
2. Initialization PhaseAll systems return to their home positions, including the manipulator, loading arm, cleaning station, positioning stage, and turntable.
3. Warm-up PhaseThe purpose is to bring all systems to a stable operating state, including the rough grinding spindle, fine grinding spindle, chuck spindle, etc.
4. Fully Automatic Processing Phase (Same Cassette Mode):
| Step | Description |
| Step 1 | Place wafer cassette A containing wafers on the material stage. |
| Step 2 | Pick one wafer from wafer cassette A. |
| Step 3 | The manipulator transfers the wafer to the positioning stage, which aligns and centers the wafer. |
| Step 4 | The loading arm manipulator picks up the aligned wafer and moves it to Station A, which has been pre-cleaned by a brush. |
| Step 5 | The work turntable rotates to Station C to start fine grinding and thinning processing; the thickness gauge measures wafer thickness online and compensates the infeed. |
| Step 6 | The work turntable rotates to Station B to start polishing processing; the thickness gauge measures wafer thickness online and compensates the infeed. |
| Step 7 | The work turntable rotates counterclockwise by 240° and returns to Station A. |
| Step 8 | The unloading arm manipulator transfers the wafer after thinning and polishing to the pre-cleaned cleaning station for washing, air blowing and spin-drying. |
| Step 9 | The robot picks up the cleaned wafer and places it into the wafer cassette on the material stage. |
| Step 10 | The manipulator places the wafer back into wafer cassette A on the material stage. Repeat Steps 2 to 10 until the cassette is full. |
| Step 11 | After wafer cassette A is full, manual cassette replacement is required. |
| Step 12 | After all wafers in cassette A are picked up, the manipulator starts to take wafers from cassette B and repeats the above processing flow. |
| Summary: only manual intervention required is placing and replacing wafer cassettes. | |
Technical Parameter
| Item Name | Parameter Value |
| Model | HY-ST3005 |
| Grinding Wafer Diameter (mm) | 200–300 mm (Max. 300 mm for this series) |
| Grinding Wafer Thickness (μm) | Max. 1800 |
| Thinning Machine Type | Dual Spindle, 3 Workstations + Rotary Table |
| Operation Mode | Fully Automatic Grinding / Manual Grinding (Cassette-to-Cassette) |
| Grinding Method | Wafer Rotation, Axial In-Feed Grinding (in-Feed) |
| Grinding Spindle Power (kW) | 11 |
| Grinding Spindle Type | Air Spindle (End Runout: 0.1 μm) |
| Grinding Spindle Speed (rpm) | 500–3000 (Independent speed adjustment for two spindles) |
| Minimum Control Unit of Grinding Spindle Speed | 1 |
| Effective Z-Axis Stroke (mm) | 100 (With Origin Function) |
| Spindle Feed Motor Power (kW) | 0.75 |
| Z-Axis Rapid Traverse Speed (μm/s) | Max. 5000 |
| Minimum Z-Axis Motion Resolution (μm) | 0.1 |
| Z-Axis Grinding Feed Rate (μm/s) | 0.1–80 |
| Diamond Grinding Wheel Diameter (mm) | 300 |
| Wheel Dressing Function | Manual dressing plate placement, automatic dressing program |
| Grinding Wheel Wear Calculation | Automatic calculation, display of estimated processable quantity, alarm prompt when remaining teeth are insufficient |
| Thickness Measurement Range (μm) | 1800 |
| Thickness Measurement Resolution (μm) | 0.1 |
| Thickness Measurement Repeatability (μm) | 0.25 |
| Thickness Measurement Method | Contact Measurement |
| Chuck Type | Microporous Ceramic Chuck Table |
| Wafer Clamping Method | Vacuum Adsorption |
| Chuck Spindle Speed (rpm) | 0–300 (Independent speed adjustment for three spindles) |
| Effective Chuck Thickness (mm) | 5 |
| Chuck Spindle Type | Mechanical Spindle (Runout: 1.5 μm) Air Spindle (End Runout: 0.1 μm) |
| Chuck Cleaning Method | Brush and oil stone cleaning during table water/air backflushing |
| Wafer Processing Flow | Same Cassette Flow |
| Wafer Cleaning | Cleaning and drying via water-air dual-fluid nozzles |
| Wafer Positioning Method | 6-Jaw Clamping Positioning |
| Ultimate Vacuum Pressure (kPa) | -88 |
| TTV (μm) | ≤3, measured at 5 points 5 mm inward from wafer edge (12" Si wafer) ≤7, measured at 5 points 5 mm inward from wafer edge (12" SiC wafer) |
| WTV (μm) | ≤±3 (12" Si wafer) |
| Surface Roughness Ra (μm) | ≤0.02 (Si: Diamond wheel grit size 2000#) ≤0.3 (Sapphire: Diamond wheel grit size 500#) ≤0.003 (SiC: Diamond wheel grit size 8000#) |
| Total Equipment Power (kW) | 30 |
| Total Equipment Weight (kg) | Approx. 5500 |
| Overall Dimensions (L×W×H mm) | 3500×1300×2000 |
Safety and Protection
| No. | Item | Description |
| 1 | EMO Button Configuration | At least one EMO button is provided beside each touch screen of the equipment. |
| 2 | Leakage Protection | The equipment is equipped with safety protection functions against water leakage and electric leakage. |
| 3 | Water System Alarm | Alarm for water cutoff, insufficient water pressure or over-limit water temperature. |
| 4 | Air Supply Protection | Alarm and machine shutdown for interrupted air supply or insufficient air pressure. |
| 5 | Vacuum Alarm | Alarm for insufficient vacuum pressure. |
| 6 | Overload Protection | Overload waiting function. |
| 7 | Interlock Protection | Interlock function is available on the door or cover at the transmission unit. Opening the door will trigger an alarm and stop the transmission. |
| 8 | Wafer Drop Alarm | Alarm for wafer dropping during transmission. |
| 9 | Cassette Position Alarm | Alarm for improperly placed or incorrectly positioned loading / unloading cassettes. |
Site Facilities and Supporting Requirement
| Site Facilities (Supporting Equipment) Customer-Supplied Accessories |
Item | Specification |
| Power Supply | Machine Voltage: AC380V ±10%, Current: 55A, Power: 30kW | |
| Environmental Requirements | Free of explosive, flammable and corrosive gases; 26℃ constant temperature dust-free workshop; 40~85%RH | |
| Air Supply | Air Pressure: 0.6~0.8MPa, Dew Point: -40℃, Residual Dust Content ≤0.1mg/m³, Residual Oil Content ≤0.01mg/m³, Flow Rate >600L/min, Pipe Diameter: ø16mm | |
| Spindle Cooling Water Supply | Chiller is delivered with the machine | |
| Inlet water temperature: 20~22℃, Circulating water flow rate: 5~15L/min | ||
| Cooling water pressure: 0.2~0.3MPa, Pipe diameter: ø12mm | ||
| Vacuum Supply | Vacuum pump is delivered with the machine | |
| -80kPa ~ -90kPa, Pipe diameter: ø25mm | ||
| Grinding Water Supply | Ultrapure Water, Water Pressure: 0.3~0.4MPa, Pipe Diameter: ø25mm | |
| Drainage Requirements | Organic Wastewater, Pipe Diameter: ø52mm | |
| Exhaust & Fume Extraction | Flow Rate >4m³/min, Pipe Diameter: 2×ø76mm |
Product Details
HY-WT9330 is equipped with one air-bearing grinding spindle and two air-bearing workpiece spindles. It can process various ultra-hard, brittle and hard-to-grind substrates up to 12 inches, enabling high-efficiency, damage-free and ultra-precise mirror grinding with outstanding thickness accuracy, suitable for the back thinning process of all types of chip wafers.
HY-WT9530 is fitted with 2 air-bearing spindles and 3 vacuum chuck tables for hard brittle substrates up to 8-inch. Operators only need to load cassettes manually, while the machine completes full automatic cycles including rough/fine grinding, cleaning and recovery. Post-grinding TTV≤1.5μm with excellent flatness and surface roughness, suitable for backside thinning of various semiconductor wafers.
HY-WT9730 supports wafers up to 12-inch. Equipped with 3 grinding air-bearing spindles and 4 workpiece air-bearing spindles, it integrates rough grinding, fine grinding and polishing processes. The full robotic workflow automatically completes wafer transfer, processing, cleaning and unloading; only manual cassette feeding is needed. Ultra-precise Z-axis feed delivers superior wafer flatness and damage-free mirror polishing, while its sturdy frame guarantees stable mass production.
HY-WT9230 is developed for ultra-hard brittle semiconductor materials up to 12 inches. Built with dual air-bearing spindles and a high-precision grinding Z-axis, it supports fully automatic mirror thinning with high efficiency and damage-free processing. Equipped with a porous vacuum chuck and ultra-fine feed control, the machine ensures superior flatness and thickness uniformity for semiconductor wafer thinning processes.
HY-IS1000 is dual-station SiC ingot laser slicing and grinding equipment combining laser modification and wafer delamination processes. It uses ultra-short pulse laser to form internal modified layers inside SiC ingots for saw-mark-free wafer splitting, delivering high throughput with ground wafer TTV ≤1.1 μm. It is essential mass-production equipment for third-generation semiconductor substrate manufacturing.
HY-WC615 double-side wafer chamfering machine is equipped with CCD vision positioning & online thickness measurement modules, self-developed core mechanical components and full auto loading/unloading system, delivering outstanding machining precision and user-friendly touch operation for wafer chamfer processing.
The HY-ST3002 handles 4–12 inch wafers for precision thinning and grinding of hard brittle semiconductors. Fully upgraded with mature processes, it features enhanced accuracy and stable long-run performance, with refined automatic thinning architecture and premium key parts: hydrostatic air-bearing grinding spindle, hydrostatic air-bearing wafer holding spindle, high-rigidity large-diameter rotary table.
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