Vertical Single-Station Wafer Thinning Machine for Semiconductor Silicon

The HY-ST3002 handles 4–12 inch wafers for precision thinning and grinding of hard brittle semiconductors. Fully upgraded with mature processes, it features enhanced accuracy and stable long-run performance, with refined automatic thinning architecture and premium key parts: hydrostatic air-bearing grinding spindle, hydrostatic air-bearing wafer holding spindle, high-rigidity large-diameter rotary table.

Brand :
HYRNUS
Item No. :
HY-ST3002
Order(MOQ) :
1 Set
Warranty :
One-Year Warranty and Lifetime Maintenance
Payment :
T/T
Lead Time :
7-35 Days
Product Origin :
China

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Vertical Single-Station Wafer Thinning Machine for Semiconductor Silicon

Product Introduction

The HY-ST3002 Vertical Single-Station Wafer Thinning Machine performs precision thinning for 4–12 inch hard brittle semiconductor wafers. Fully optimized with hydrostatic air-bearing spindles and high-rigidity rotary table, it delivers superior accuracy and stability.

It adopts customizable 12-inch diamond wheels and In-Feed grinding for Φ50~300 mm single / multi-wafer processing. Standard configurations include in-line thickness measurement, multi-stage grinding recipes, data logging and dual-fluid cleaning; optional modules cover non-contact NCG measurement, brush cleaning, wheel dressing and 12-inch ring lifting. Users can choose low-vibration air-bearing spindles or cost-effective mechanical spindles with variable frequency speed control. Equipped with an LCD touch panel and servo full-closed-loop screw guide for adjustable feed speed, the machine is easy to operate and highly adaptable to various processes.

Product Advantages

1. Customized Grinding Wheel: 12-inch standard diamond wheel with grit size customized to customer processes.

2. Wide Wafer Compatibility: In-Feed axial grinding design supports Φ50~300 mm wafers for single or batch simultaneous thinning.

3. Precision Thickness Monitoring: Standard in-line thickness gauge for real-time thickness control; optional non-contact NCG measuring unit.

4. Flexible Process Management: Up to 5 editable grinding recipes, overload protection & full data logging for diverse processes.

5. Wafer Crack Prevention: Optional 12-inch ring lifting system loads laminated rings and auto-lifts post-processing to avoid wafer breakage.

6. Dual Cleaning Solutions: Standard dual-fluid cleaning; optional brush cleaning for post-grinding wafer cleansing.

7. Auto Wheel Dressing Module: Optional auto dresser maintains wheel sharpness per preset parameters.

8. Dual Spindle Selections: Choose low-vibration, low-expansion air-bearing spindle or cost-saving mechanical spindle; variable-frequency stepless speed control via HMI.

9. User-Friendly Touch HMI: LCD touchscreen displays real-time machine & process status for simple operation & maintenance.

10. Closed-Loop Precision Feed: Servo full-closed-loop screw & rail drive with adjustable grinding feed speed for different wafer materials.

Application Fields

It is mainly used for precision thinning of hard and brittle semiconductor materials including sapphire, silicon wafers, germanium wafers, silicon carbide, gallium nitride, gallium arsenide, silicon nitride and ceramics.

Detailed Equipment Composition Structure

Category	Component	Brand/Specification
Mechanical Structure	Air Spindle (Special Component)	In-house (Core Patent)
	Wafer Chuck Spindle	In-house (Core Patent)
	Linear Guide	THK / HIWIN / Dinghan
	Ball Screw Module	THK / HIWIN / Dinghan
	Water Inlet Flow Control Valve	SMC / CKD / Airtac
	Thickness Gauge	MARPOSS / PRECITEC / KEYENCE
Electrical Control System	Industrial PC (IPC)	Advantech / Panasonic / Siemens
	Touch Screen	Weinview / Kinco / Advantech
	Leakage Circuit Breaker	Chint / Schneider
	Switching Power Supply	Chint / Schneider
Pneumatic System	Air Cylinder	SMC / CKD / Airtac
	Pressure Control	SMC / CKD / Airtac
	Pressure Regulation	SMC / CKD / Airtac
	Pressure Indication	SMC / CKD / Airtac
	Solenoid Valve	SMC / CKD / Airtac

Equipment Working Process

The full working process of the vertical single-station thinning machine is divided into 5 main stages: Preparation Stage, Initialization Stage, Preheating Stage, Processing Stage, and Completion Stage.

1. Preparation Stage

This stage covers pre-operation preparation: turn on the water supply, compressed air, and power supply, then start the equipment.

2. Initialization Stage

All systems are reset to their initial positions, including returning the grinding spindle and wafer chuck turntable to their home positions.

3. Preheating Stage

This stage stabilizes all moving systems (including the grinding spindle and wafer chuck spindle) to ensure consistent operational performance.

4. Processing Stage (Detailed Steps)

Step	Description
Step 1	Process engineers determine the processing technology, modify or select the process recipe.
Step 2	Operators place the ring-mounted wafer on the work turntable, align with the positioning pin, and activate the vacuum to secure the wafer.
Step 3	Operators press the start button; the safety door closes automatically, and the equipment begins automatic processing.
Step 4	After processing, the equipment resets and stops. Operators remove the wafer and repeat Step 3 for subsequent wafers.
Step 5	Manually inspect the wafer thickness after removal. Place qualified (OK) wafers in the material cassette, and non-conforming (NG) wafers in the reject cassette.
Step 6	Repeat Steps 1 to 4 to perform thinning operations on subsequent wafers.

5. Completion Stage

This stage covers post-batch shutdown procedures: turn off the water supply, compressed air, vacuum, spindle cooling water, and power supply, exit the program, and shut down the equipment.

Technical Parameter

Parameter Name	Parameter Value
Model	HY-ST 3002
Grinding Wafer Diameter (mm)	Max. 300
Maximum Grinding Wafer Thickness (mm)	Max. 50
Thinning Machine Type	Single-station, Single-spindle Rotary Worktable
Operation Mode	Semi-automatic Grinding Mode (Manual Loading/Unloading)
Grinding Method	Wafer Rotation, Axial In-Feed Grinding (in-Feed)
Grinding Spindle Power (kW)	11 (Air-floating Spindle) 15 (Mechanical Spindle)
Grinding Spindle Type	Air-floating Spindle / Mechanical Spindle
Grinding Spindle Speed (rpm)	500~3000
Minimum Control Step of Grinding Spindle Speed	1
Z-axis Effective Stroke (mm)	100 (With Origin Function)
Spindle Feed Motor Power (kW)	0.75
Z-axis Grinding Feed Rate (μm/s)	0.1~80
Z-axis Rapid Traverse Speed (μm/s)	Max. 5000
Z-axis Minimum Motion Resolution (μm)	0.1
Diamond Grinding Wheel Diameter (mm)	300
Dressing Function	Automatic Wheel Dressing (Optional)
Thickness Measurement Resolution (μm)	0.1
Thickness Measurement Repeatability (μm)	0.5
Thickness Measurement Range (μm)	0~5000 (Other ranges available upon wafer requirements)
Thickness Measurement Method	Contact MeasurementNon-contact Measurement NCG (Optional: Range selectable per wafer requirements; measures only actual wafer thickness, excluding influences of process layers such as bonding adhesive, bonding wax, and films)
Clamping Worktable Type	Microporous Ceramic Chuck
Wafer Clamping Method	Vacuum Adsorption
Ring Specification	12-inch (Optional)
Ring Lifting Structure	Optional
Wafer Chuck Spindle Speed (rpm)	0~300
Chuck Cleaning Method	Manual Cleaning (Automatic Cleaning Optional)
Ultimate Vacuum Pressure (kPa)	-88
TTV (μm)	≤3 (Measured at 5 mm inward from wafer edge for 12-inch Si wafers, 5-point thickness measurement) ≤7 (Measured at 5 mm inward from wafer edge for 12-inch SiC wafers, 5-point thickness measurement)
Wafer-to-wafer Thickness Variation (μm)	≤±3 (For 12-inch Si wafers)
Surface Roughness Ra (μm)	≤0.02 (Si: Diamond grinding wheel grit 2000#) ≤0.3 (Sapphire: Diamond grinding wheel grit 500#) ≤0.003 (SiC: Diamond grinding wheel grit 8000#)
Total Equipment Power (kW)	17/21
Total Equipment Weight (kg)	Approx. 2600
Overall Dimensions (L×W×H mm)	1520×1150×1930 mm