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HY-HW3018 Ultrasonic Heavy Wire Bonder is used for internal lead bonding of medium- and high-power transistors, MOSFETs, various power modules, high-current fast recovery diodes, Schottky diodes, thyristors, IGBTs, and other special semiconductor power devices.
Brand :
HYRNUSItem No. :
HY-HW3018Order(MOQ) :
1 SetWarranty :
One-Year Warranty and Lifetime MaintenancePayment :
T/TLead Time :
7-35 DaysProduct Origin :
ChinaUltrasonic Heavy Wire Bonder Aluminum Gold Ribbon Bonding Machine
Product Introduction
HY-HW3018 Ultrasonic Heavy Aluminum Wire Bonder is designed for internal lead bonding of medium- and high-power semiconductor power devices, including transistors, MOSFETs, power modules, high-current fast recovery diodes, Schottky diodes, thyristors, and IGBTs.
It is suitable for TO-3, TO-3P, TO-3PF, TO-3PN, TO-3PL, TO-220F, TO-126, TO-12F, TO-66, TO-251, TO-202 and other package types. It can also be used for automotive sensors, high-power pressure sensors, and other special semiconductor power devices.
The machine features stable performance, easy operation, simple maintenance, and a compact desktop structure. It is especially suitable for laboratory use, R&D applications, and small-batch production.
Features
*Stepper motor-driven Y-axis and Z-axis movement with precision screw and guide rail transmission, ensuring flexible motion, accurate positioning, and fast bonding speed.
*High ultrasonic power margin and newly designed transducer provide stable and reliable performance under high-power and long-time operation.
*Capillary installation detection function helps check whether the capillary is correctly installed, improving bonding reliability.
*Electromagnetic bonding pressure with automatic pressure control ensures stable and accurate pressure throughout the bonding process.
*Excellent ultrasonic, pressure, and motion control systems help achieve strong bond points, consistent bond quality, and good wire loop appearance.
*Supports dual bond points for the first bond and second bond, reducing bond resistance and improving reliability for large-area power devices.
*Can store wire span, loop height, and aiming height data for two wires, improving operation efficiency for power device bonding.
*Convenient parameter adjustment for ultrasonic power, bonding time, pressure, loop height, wire span, aiming height, and tail wire length.
*Capable of bonding aluminum ribbon, gold ribbon, copper wire, and other metal wires.
Applications
*Medium- and high-power transistors
*MOSFETs
*IGBTs
*Various semiconductor power modules
*High-current fast recovery diodes
*Schottky diodes
*Thyristors
*Automotive sensors
*High-power pressure sensors
*Special semiconductor power devices
Applications with Customized Fixtures
*TO-3、TO-3P、TO-3PF、TO-3PN、TO-3PL、TO-220、TO-220F、TO-126、TO-66、TO-251、TO-202, Other customized package types
Technical Parameters
| Item | Specification |
| Power Supply | 220 V AC ±10%, 50 Hz, reliable grounding required |
| Max. Power Consumption | 200 W |
| Applicable Aluminum Wire Diameter | 100–500 μm / 4–20 mil |
| Ultrasonic Power | 0–30 W, 2 ranges, 2 channels; first and second bond can be adjusted separately |
| Bonding Time | 10–500 ms, 2 channels |
| Bonding Pressure | 30–1200 g, 2 channels, precise adjustment |
| Automatic Span from First Bond to Second Bond | 0–18 mm |
| Microscope | 15× / 30× two-step magnification |
| Worktable Movement Range | Φ25 mm |
| Lighting | Adjustable brightness |
| Overall Dimensions | 620 × 610 × 560 mm |
| Weight | Approx. 40 kg |
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