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HY-PS13 is a CCP vacuum plasma system dedicated to wafer photoresist stripping, cleaning and surface activation. Popular in research labs and small-batch semiconductor production, its stainless steel chamber full set with pump & gas modules improves material surface adhesion and hydrophilicity for bonding, coating and thin-film processes.
Brand :
HYRNUSItem No. :
HY-PS13Order(MOQ) :
1 SetWarranty :
One-Year Warranty and Lifetime MaintenancePayment :
T/TLead Time :
7-35 DaysProduct Origin :
China13L CCP RF Vacuum Plasma Cleaner for Wafer Photoresist Stripping and Surface Activation
Product Introduction
HY-PS13 13L RF Vacuum Plasma Cleaner is a capacitively coupled (CCP) vacuum plasma system engineered for wafer & silicon substrate photoresist stripping, surface cleaning and activation. Widely adopted by university research labs, enterprise R&D centers and small-volume semiconductor manufacturing lines, this all-square stainless steel plasma unit integrates a vacuum processing chamber, plasma generator, vacuum pump and complete gas inlet & outlet assemblies.
Featuring military-grade hermetic welding, 3-layer wafer tray and 13.56MHz auto-matching RF power supply, it greatly boosts substrate surface adhesion and optimizes material hydrophilicity. It delivers stable, consistent processing performance for wafer bonding, coating, thin-film deposition, microfluidic packaging and all types of precision material modification workflows.
Product Application
1. Cleaning: Removal of organics, oxides, metal salts, nano-scale particulate contaminants, etc.
2. Activation: Hydrophilic/hydrophobic modification, surface energy improvement, functional group grafting, biocompatibility optimization, etc.
3. Etching: Surface patterning, micro-etching, surface morphology & roughness adjustment, etc.
4. Bonding: Bonding of microfluidic devices such as PDMS chips.
5. Photoresist Stripping: Photoresist ashing, bottom anti-reflective coating (BARC) removal, etc.
Product Features
1. Stainless steel vacuum chamber manufactured with military-grade welding technology, delivering outstanding air tightness and long-term durability for stable plasma processing.
2. 3-layer stainless steel sample tray design supports small-batch processing and greatly maximizes internal chamber space utilization.
3. User-friendly touchscreen HMI allows real-time monitoring and full parameter control of the entire processing cycle.
4. Stores multiple custom process recipes for one-click recall; all historical process data is fully traceable for experiment and production records.
5. Dual high-precision MFC mass flow controllers, enabling flexible testing of mixed gas ratios to optimize cleaning and treatment results.
6. Equipped with a 13.56MHz RF plasma power supply with automatic impedance matching, offering superior process stability and repeatability.
Machine Outline Drawing and Vacuum Chamber Diagram
Technical Specifications
| No. | Category | Item | Specification & Parameters |
| 1 | Plasma Generator | Solid-state Power Supply | Adjustable from 0–300W, standard sine wave output; stability ≤ ±0.5%; protection against overvoltage, overcurrent, overtemperature and reflected power |
| Anti-radiation High-Frequency Matcher | High-speed automatic matching within 0.1s, supports network communication | ||
| RF Frequency | 13.56 MHz | ||
| 2 | Vacuum Reaction Chamber | Chamber Material | Imported 316 stainless steel with military-grade sealing |
| Chamber Volume | 240(W) × 280(D) × 200(H) mm; 13L | ||
| Effective Processing Space | 205(W) × 210(D) × 30(H) mm | ||
| Processing Layers | 3 layers | ||
| Electrode Spacing | 45 mm | ||
| Tray Spacing | 30 mm | ||
| Uniformity | Within-wafer uniformity ≤ ±20%; wafer-to-wafer uniformity ≤ ±20%; batch-to-batch uniformity ≤ ±20% | ||
| 3 | Discharge Electrode | Electrode | Special high-conductivity aluminum alloy electrode |
| Discharge Mode | CCP & RIE ion reaction discharge modes | ||
| 4 | Gas Circuit Control | Gas Mass Flow Controller | 300 SCCM |
| Gas Circuit Design | Uniform chamber gas inlet design to guarantee consistent cleaning & etching effects | ||
| Gas Channels | 2 gas channels, compatible with O₂, Ar, N₂, H₂, etc. Notify us in advance if corrosive gases are required | ||
| 5 | Vacuum Measurement | Vacuum Measuring System | Measuring range: 5×10⁻² ~ 1.0×10⁵ Pa |
| Measurement accuracy: 0.1 Pa | |||
| 6 | Pumping System | Vacuum Pump | 16 m³/h |
| Vacuum Pipeline | Stainless steel pipeline + pneumatic valves | ||
| 7 | Control System | Control Mode | PLC |
| Touchscreen | 7-inch touch panel | ||
| Real-time Monitoring | Real-time display of power, vacuum degree, air pressure, gas flow, working time, etc. | ||
| Software Program | Self-developed patented plasma control system; 3-level authority management; auto & manual modes; recipe parameter setting, storage & recall; alarm history query, IO monitoring | ||
| Alarm Functions | Vacuum protection alarm, glow loss alarm, power overload alarm, air pressure alarm, phase sequence alarm | ||
| 8 | Site Conditions | Pressure Balancing Function | Supports process gas inlet with configurable balancing time for pressure stabilization |
| Power Supply | 220V, 50/60Hz, 9A | ||
| Gas Pipe Connector | 6 mm diameter | ||
| Gas Purity Requirement | 99.99% | ||
| Gas Inlet Pressure | 0.4–0.6 MPa | ||
| Exhaust Port | KF25 flange | ||
| 9 | Overall Unit Parameters | Total Power Consumption | 2 KW |
| Overall Dimension | 640mm (W) × 665mm (D) × 580 mm (H) |
Operating Environment (Items to be Prepared by Customer)
| No. | Item | Requirements |
| 1 | Power Supply | Grid standard: 220V, 50/60Hz, voltage fluctuation ±10%; the ground wire meets international standards; no strong electromagnetic interference around the equipment installation position. |
| 2 | Installation Environment | Ambient temperature: 0–40°C; Relative humidity: 15%–60%. |
| 3 | Gas Source | Gas cylinders for O₂, Ar, N₂, H₂ and other process gases (equipped with pressure reducing valves); inlet gas pressure ＞0.3MPa; gas pipe connector diameter: Φ6mm. |
| 4 | Exhaust Pipeline | Connect to the exhaust outlet of the vacuum pump (mandatory for cleanroom applications). |
Product Details
HY-AD03 is an atmospheric direct plasma cleaning device designed for surface cleaning, activation and modification under ambient air conditions. It features concentrated energy with a small treatment footprint, which effectively improves product adhesion, hydrophilicity and printability. It can also remove contaminants such as organic residues, oil stains and oxide layers from material surfaces.
HY-TM500 works under atmospheric pressure without vacuum chambers. Custom 3-axis rails deliver full-coverage precise treatment. Built with military-grade hardware and digital control, it supports 0–800W adjustable power. Zero-potential low-temperature plasma protects PCB, FPC and semiconductor components, completing surface cleaning, activation and modification to boost adhesion for bonding, printing and coating. It is ready for inline automation in 3C, display, semiconductor, automotive and new energy industries.
HY-DC1000 is equipped with a wide coverage rotary gun and interchangeable nozzles ranging from 20 to 80mm, customized for large flat workpieces including full-size PCBs, new energy battery electrodes, automotive plastic components and display glass panels. It supports 0–1000W wide-range adjustable power to form uniform plasma coverage over large surfaces, efficiently stripping organic contaminants and eliminating printing voids & coating delamination issues for mass-production inline assembly lines.
HY-DD600 adopts narrow small nozzle design (2–6mm effective width), dedicated for tiny precision sensitive parts including chips, FPC flexible circuits, miniature BGA substrates. Zero-potential low-temperature plasma jet eliminates thermal burn risk for ultra-thin PI/ITO materials. Its compact gun fits narrow gaps and complex micro-structures, perfectly matching small automatic bonding & dispensing lines for semiconductor packaging and camera module pretreatment.
HY-AC500 adopts rotary plasma spray gun and dual manual & I/O control modes, realizing uniform cleaning, activation and micro-etching for PCB, FPC, BGA and semiconductor chips. It features military-grade hardware, digital real-time monitoring and multi-layer safety protection. This desktop 1000W analog plasma machine is widely used for pre-treatment in semiconductor packaging, 3C electronics, display, automotive electronics and new energy industries.
HY-AC1000H uses vacuum-free low-temperature neutral plasma, fitted with customizable rails and dual rotary guns. With 0–1000W adjustable power and 20–80mm treatment width, it safely cleans chips without thermal damage. Combined physical & chemical dry cleaning enhances bonding for die attach, wire bonding and molding to reduce delamination and voids. Supporting manual & IO control with full safety monitoring, it connects to auto lines for continuous processing of substrates, lead frames and large FPC panels, delivering stable long-hour full-load production with response time below 0.1s.
HY-AS1200 is fitted with a motor-driven rotating nozzle to create an even plasma surface. With a treatment width of 20–80 mm and adjustable power ranging from 0 to 1200 W, it perfectly matches batch pre-treatment of large-area lead frames and substrates. The room-temperature neutral plasma will not damage chips, dry removing organic residues and surface oxides under atmospheric pressure to strengthen adhesion for die attach, wire bonding and molding while cutting delamination and void defects. Equipped with multi-layer safety protection and fully compatible with automated production lines, this equipment is widely used in packaging and testing procedures for ICs, FPCs and automotive chips.
HY-AD800 safely processes delicate chips, PCBs and plastic components without thermal deformation. Equipped with 0–800W adjustable power, IO/manual dual operation and complete safety protection, it can be easily integrated into automated production lines for surface cleaning, activation and improved bonding, making it ideal for semiconductor packaging, 3C electronics, automotive, new energy and LED manufacturing.
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